Films of hydrogenated silicon oxycarbonitride. Part I. Chemical and phase composition

被引：0
|
作者：
N. I. Fainer
A. G. Plekhanov
Yu. M. Rumyantsev
E. A. Maximovskii
V. R. Shayapov
A. G. Plekhanov
Yu. M. Rumyantsev
E. A. Maximovskii
V. R. Shayapov
机构：
[1] Russian Academy of Sciences,Nikolaev Institute of Inorganic Chemistry, Siberian Branch
来源：
Glass Physics and Chemistry | 2014年 / 40卷
关键词：
silicon oxycarbonitride thin films; plasma chemical synthesis; nanocomposite films; phases of the α- Si; C; N; family;
D O I：
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摘要：
The method of preparation of hydrogenated silicon oxycarbonitride films with variable composition SiCxNyOz: H by the plasma chemical vapor decomposition of a volatile organosilicon compound, 1,1,1,3,3,3-hexamethyldisilazane (enhanced to IUPAC, bis(trimethylsilyl)amine) in a gas phase containing nitrogen and oxygen in the temperature range of 373–973 K has been developed. It has been shown that nitrogen and oxygen provide the decrease in carbon content in films due to gas-phase reaction giving volatile products (CN)2, CH4, CO, and H2(H). The obtained SiCxNyOz: H films are nanocomposite, in the amorphous part of which the nanocrystals are distributed, which belong to the determined phases of the Si-C-N system, namely, α-Si3N4, α-Si3 − xCxN4, and graphite.
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页码：570 / 577
页数：7
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