Monitoring the composition of the Cd1 − zZnzTe heteroepitaxial layers by spectroscopic ellipsometry

被引：0
|
作者：
M. V. Yakushev
V. A. Shvets
I. A. Azarov
S. V. Rykhlytski
Yu. G. Sidorov
E. V. Spesivtsev
T. S. Shamirzaev
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch
[2] Novosibirsk State University,undefined
来源：
Semiconductors | 2010年 / 44卷
关键词：
Absorption Edge; ZnTe; Optical Constant; HgTe; Spectroscopic Ellipsometry;
D O I：
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中图分类号：
学科分类号：
摘要：
A hardware-software complex based on a spectroscopic ellipsometer integrated into a molecular beam epitaxy installation and destined to monitor the composition of the Cd1 − zZnzTe alloy at small values of z is described. Methodical features of determination of the composition of growing layers by the spectra of ellipsometric parameters are considered. The procedure of determination of the composition by the absorption edge that allows measuring this parameter accurate to 1.2% is developed. Problems are considered the solutions of which will allow one to increase the resolution by the composition. In particular, maintaining a stable temperature during growth is required for this purpose.
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页码：59 / 65
页数：6
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