Radiation-induced hydrogen yield from silicon bombarded with 710-MeV bismuth ions

被引：0
|
作者：
V. F. Reutov
S. N. Dmitriev
机构：
[1] Joint Institute for Nuclear Research,
来源：
Technical Physics Letters | 2007年 / 33卷
关键词：
61.82.-d; 61.82.Fk; 67.80.Mg;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The behavior of hydrogen in solids under the action of intense ionizing radiation is of importance in solving numerous problems of materials science for the nuclear and thermonuclear power industry, spacecraft engineering, hydrogen energetics, and microelectronics. Experimental results are presented that provide evidence of the radiation-induced yield of hydrogen from single crystal silicon bombarded with 710-MeV bismuth ions.
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页码：203 / 204
页数：1
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