Investigation of the structure of an amorphous As-Se semiconductor system by relaxation methods

被引：0
|
作者：
R. A. Castro
V. A. Bordovsky
G. I. Grabko
T. V. Taturevich
机构：
[1] Hertzen Russian State Pedagogical University,
来源：
Semiconductors | 2011年 / 45卷
关键词：
Thermal Evaporation; Relaxation Oscillator; Charge Carrier Transport; Negative Correlation Energy; Chalcogenide Vitreous Semiconductor;
D O I：
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中图分类号：
学科分类号：
摘要：
The results of a complex investigation into dark-current relaxation in the long-time region of an MIM structure based on an As-Se thin-film chalcogenide system are presented. The values of parameters describing the electronic processes ocurring in the contact layers of the investigated compounds are estimated. The coincidence of the nature of conductivity and charge-accumulation mechanisms is revealed. The relaxation-time distribution function is calculated, and its structural sensitivity to such technological factors as the change in the composition stoichiometry and the method for manufacturing experimental samples is established.
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页码：1583 / 1588
页数：5
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