Light-emitting diodes by band-structure engineering in van der Waals heterostructures

被引：0
|
作者：
F. Withers
O. Del Pozo-Zamudio
A. Mishchenko
A. P. Rooney
A. Gholinia
K. Watanabe
T. Taniguchi
S. J. Haigh
A. K. Geim
A. I. Tartakovskii
K. S. Novoselov
机构：
[1] School of Physics and Astronomy,Department of Physics and Astronomy
[2] University of Manchester,undefined
[3] Oxford Road Manchester M13 9PL,undefined
[4] UK,undefined
[5] University of Sheffield,undefined
[6] School of Materials,undefined
[7] University of Manchester,undefined
[8] Oxford Road Manchester M13 9PL,undefined
[9] UK,undefined
[10] National Institute for Materials Science,undefined
[11] 1-1 Namiki Tsukuba 305-0044,undefined
[12] Japan,undefined
[13] Manchester Centre for Mesoscience and Nanotechnology,undefined
[14] University of Manchester,undefined
[15] Oxford Road Manchester M13 9PL,undefined
[16] UK,undefined
来源：
Nature Materials | 2015年 / 14卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Monolayers of graphene, boron nitride and transition metal dichalcogenides are stacked in vertical heterostructures to realize light-emitting devices based on single and multiple quantum wells, with bright electroluminescence up to room temperature.
引用
收藏
页码：301 / 306
页数：5
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