Effect of neutron radiation on the photoelectric parameters of p-n-InSe structures

被引：0
|
作者：
Z. D. Kovalyuk
O. A. Politanska
P. G. Litovchenko
V. F. Lastovetskii
O. P. Litovchenko
V. K. Dubovoi
L. A. Polivtsev
机构：
[1] National Academy of Sciences of Ukraine,Frantsevich Institute for Problems of Materials Science (Chernivtsy Department)
[2] National Academy of Sciences of Ukraine,Institute for Nuclear Investigations
来源：
Technical Physics Letters | 2007年 / 33卷
关键词：
72.40.+w; 73.40.Lq; 78.70.-g;
D O I：
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学科分类号：
摘要：
The effect of irradiation with fast reactor neutrons at an effective energy of 1 MeV and a fluence within Φ = 1 × 1014−5 × 1015 n/cm2 on the photoelectric parameters of p-n-InSe homojunctions obtained in direct optical contact between p- and n-type semiconductors has been studied. The exposure to fast neutrons leads to an increase in the rectification coefficient and the diode ideality factor of the current-voltage characteristics with increasing neutron dose. No significant changes have been observed in the photosensitivity spectra of p-n-InSe structures irradiated to various doses, which allows these structures to be recommended for the creation of radiation-resistant photodetectors.
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页码：767 / 770
页数：3
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