Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes

被引：0
|
作者：
Yen-Kuang Kuo
Syuan-Huei Horng
Sheng-Horng Yen
Miao-Chan Tsai
Man-Fang Huang
机构：
[1] National Changhua University of Education,Department of Physics
[2] National Changhua University of Education,Institute of Photonics
来源：
Applied Physics A | 2010年 / 98卷
关键词：
Reversed Polarization; Normal Polarization; Carrier Distribution; Piezoelectric Polarization; Valence Band Offset;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The optical properties of blue-violet InGaN light-emitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turn-on voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region.
引用
收藏
页码：509 / 515
页数：6
相关论文
共 50 条
  • [41] Characteristics of InGaN multiple quantum well blue-violet laser diodes
    LI Deyao1
    2. Nano-Optoelectronics Laboratory
    Science in China(Series E:Technological Sciences), 2006, (06) : 727 - 732
  • [42] Influence of growth temperature and trimethylindium flow of InGaN wells on optical properties of InGaN multiple quantum-well violet light-emitting diodes
    Li, ZH
    Yu, TJ
    Yang, ZJ
    Tong, YZ
    Zhang, GY
    Feng, YC
    Guo, BP
    Niu, HB
    CHINESE PHYSICS LETTERS, 2004, 21 (09) : 1845 - 1847
  • [43] Characteristics of InGaN multiple quantum well blue-violet laser diodes
    Deyao Li
    Shuming Zhang
    Jianfeng Wang
    Jun Chen
    Lianghui Chen
    Ming Chong
    Jianjun Zhu
    Degang Zhao
    Zongshun Liu
    Hui Yang
    Junwu Liang
    Science in China Series E: Technological Sciences, 2006, 49 : 727 - 732
  • [44] Characteristics of InGaN multiple quantum well blue-violet laser diodes
    Li Deyao
    Zhang Shuming
    Wang Jianfeng
    Chen Jun
    Chen Lianghui
    Chong Ming
    Zhu Jianjun
    Zhao Degang
    Liu Zongshun
    Yang Hui
    Liang Junwu
    SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2006, 49 (06): : 727 - 732
  • [45] Effect of Internal Polarization Fields in InGaN/GaN Multiple-Quantum Wells on the Efficiency of Blue Light-Emitting Diodes
    Ryu, Han-Youl
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (09)
  • [46] Optimization of p-cladding layer utilizing polarization doping for Blue-Violet InGaN laser diodes
    Aktas, Muhammed
    Kafar, Anna
    Stanczyk, Szymon
    Marona, Lucja
    Schiavon, Dario
    Grzanka, Szymon
    Wisniewski, Przemyslaw
    Perlin, Piotr
    OPTICS AND LASER TECHNOLOGY, 2024, 177
  • [47] Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers
    Tong Jin-Hui
    Zhao Bi-Jun
    Wang Xing-Fu
    Chen Xin
    Ren Zhi-Wei
    Li Dan-Wei
    Zhuo Xiang-Jing
    Zhang Jun
    Yi Han-Xiang
    Li Shu-Ti
    CHINESE PHYSICS B, 2013, 22 (06)
  • [48] Advantages of Blue InGaN Light-Emitting Diodes with a Mix of AlGaN and InGaN Quantum Barriers
    Zeng, Si-Ming
    Fan, Guang-Han
    Zheng, Shu-Wen
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (10) : 3253 - 3258
  • [49] Mechanism of optical degradation in microstructured InGaN light-emitting diodes
    Li, Z. L.
    Li, K. H.
    Choi, H. W.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (11)
  • [50] Advantages of Blue InGaN Light-Emitting Diodes with a Mix of AlGaN and InGaN Quantum Barriers
    Si-Ming Zeng
    Guang-Han Fan
    Shu-Wen Zheng
    Journal of Electronic Materials, 2015, 44 : 3253 - 3258
12345