Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes

被引：0
|
作者：
Yen-Kuang Kuo
Syuan-Huei Horng
Sheng-Horng Yen
Miao-Chan Tsai
Man-Fang Huang
机构：
[1] National Changhua University of Education,Department of Physics
[2] National Changhua University of Education,Institute of Photonics
来源：
Applied Physics A | 2010年 / 98卷
关键词：
Reversed Polarization; Normal Polarization; Carrier Distribution; Piezoelectric Polarization; Valence Band Offset;
D O I：
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中图分类号：
学科分类号：
摘要：
The optical properties of blue-violet InGaN light-emitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turn-on voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region.
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页码：509 / 515
页数：6
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