Reflectivity kinetics in the vicinity of exciton transitions in semiconductor nanostructures

被引：0

作者：

Rubtsova N.N. ^{[1
]}

Buganov O.V. ^{[2
]}

Kovalyov A.A. ^{[1
]}

Putyato M.A. ^{[1
]}

Preobrazhenskii V.V. ^{[1
]}

Pchelyakov O.P. ^{[1
]}

Tikhomirov S.A. ^{[2
]}

Shamirzaev T.S. ^{[1
]}

机构：

[1] Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk 630090

[2] Stepanov Institute of Physics, National Academy of Sciences of Belarus

来源：

Bull. Russ. Acad. Sci. Phys. | 2008年 / 5卷 / 715-717期

基金：

俄罗斯基础研究基金会;

关键词：

GaAs; Gallium Arsenide; Light Hole; Exciton Transition; Semiconductor Nanostructures;

D O I：

10.3103/S1062873808050353

中图分类号：

学科分类号：

摘要：

The kinetics of the reflectivity of semiconductor samples with multiple GaAs/AlGaAs quantum wells has been investigated by the pump-probe method with a resolution of 150 fs. Excitons of the E1HH1 and E1LH1 types manifest themselves in the kinetics of transient reflectivity spectra despite the high density of the photogenerated two-dimensional electron gas. Differences are revealed in the shape and kinetics of the transient reflectivity spectra of samples with different detuning of exciton transitions from the pump frequency. © Allerton Press, Inc. 2008.

引用

页码：715 / 717

页数：2

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