Growth of atomically thick transition metal sulfide filmson graphene/6H-SiC(0001) by molecular beam epitaxy

被引：0
|
作者：
Haicheng Lin
Wantong Huang
Kun Zhao
Chaosheng Lian
Wenhui Duan
Xi Chen
Shuai-Hua Ji
机构：
[1] Tsinghua University,State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics
[2] Collaborative Innovation Center of Quantum Matter,undefined
来源：
Nano Research | 2018年 / 11卷
关键词：
two-dimensional (2D) materials; molecular beam epitaxy; charge density wave; NbS; TaS; FeS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report the growth and characterization of atomically thick NbS2, TaS2, and FeS films on a 6H-SiC(0001) substrate terminated with monolayer or bilayer epitaxial graphene. The crystal and electronic structures are studied by scanning tunneling microscopy and reflection high-energy electron diffraction. The NbS2 monolayer is solely in the 2H structure, while the TaS2 monolayer contains both 1T and 2H structures. Charge-density waves are observed in all phases. For the FeS films, the tetragonal structure coexists with the hexagonal one and no superconductivity is observed.
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页码：4722 / 4727
页数：5
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