Growth of atomically thick transition metal sulfide filmson graphene/6H-SiC(0001) by molecular beam epitaxy

被引：0
|
作者：
Haicheng Lin
Wantong Huang
Kun Zhao
Chaosheng Lian
Wenhui Duan
Xi Chen
Shuai-Hua Ji
机构：
[1] Tsinghua University,State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics
[2] Collaborative Innovation Center of Quantum Matter,undefined
来源：
Nano Research | 2018年 / 11卷
关键词：
two-dimensional (2D) materials; molecular beam epitaxy; charge density wave; NbS; TaS; FeS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report the growth and characterization of atomically thick NbS2, TaS2, and FeS films on a 6H-SiC(0001) substrate terminated with monolayer or bilayer epitaxial graphene. The crystal and electronic structures are studied by scanning tunneling microscopy and reflection high-energy electron diffraction. The NbS2 monolayer is solely in the 2H structure, while the TaS2 monolayer contains both 1T and 2H structures. Charge-density waves are observed in all phases. For the FeS films, the tetragonal structure coexists with the hexagonal one and no superconductivity is observed.
引用
收藏
页码：4722 / 4727
页数：5
相关论文
共 50 条
  • [1] Growth of atomically thick transition metal sulfide films on graphene/6H-SIC(0001) by molecular beam epitaxy
    Lin, Haicheng
    Huang, Wantong
    Zhao, Kun
    Lian, Chaosheng
    Duan, Wenhui
    Chen, Xi
    Ji, Shuai-Hua
    NANO RESEARCH, 2018, 11 (09) : 4722 - 4727
  • [2] Initial stages of molecular-beam epitaxy growth of GaN on 6H-SiC(0001)
    Lu, J
    Haworth, L
    Westwood, DI
    Macdonald, JE
    APPLIED PHYSICS LETTERS, 2001, 78 (08) : 1080 - 1082
  • [3] Suppression of spiral growth in molecular beam epitaxy of GaN on vicinal 6H-SiC(0001)
    Cui, Y
    Li, L
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (02): : 583 - 586
  • [4] Heteroepitaxial growth of GaN on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
    Waltereit, P.
    Lim, S.-H.
    McLaurin, M.
    Speck, J.S.
    Physica Status Solidi (A) Applied Research, 2002, 194 (2 SPEC.): : 524 - 527
  • [5] Heteroepitaxial growth of GaN on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
    Waltereit, P
    Lim, SH
    McLaurin, M
    Speck, JS
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 194 (02): : 524 - 527
  • [6] Evolution of spirals during molecular beam epitaxy of GaN on 6H-SiC(0001)
    Cui, Y
    Li, L
    PHYSICAL REVIEW B, 2002, 66 (15) : 1 - 6
  • [7] Lattice relaxation process of AlN growth on atomically flat 6H-SiC substrate in molecular beam epitaxy
    Onojima, N
    Suda, J
    Matsunami, H
    JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) : 1012 - 1016
  • [8] Growth of graphene structure on 6H-SiC(0001):: Molecular dynamics simulation
    Tang, Chao
    Meng, Lijun
    Xiao, Huaping
    Zhong, Jianxin
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)
  • [9] Initial growth monitoring of GaN epitaxy on 6H-SiC by metal-organic molecular beam epitaxy
    Honda, T
    Fujita, N
    Maki, K
    Yamamoto, Y
    Kawanishi, H
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) : 392 - 395
  • [10] Low temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxy
    Cai, XM
    Djurisic, AB
    Xie, MH
    Liu, H
    Zhang, XX
    COMMAD 04: 2004 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 2005, : 49 - 52
12345