Fabrication of silicon-on-insulator MEM resonators with deep sub-micron transduction gaps

被引：0

作者：

Nicoleta Diana Badila Ciressan

Cyrille Hibert

Marco Mazza

Adrian M. Ionescu

机构：

[1] Swiss Federal Institute of Technology,Electronics Laboratory

[2] Swiss Federal Institute of Technology,Center of Micro

来源：

Microsystem Technologies | 2007年 / 13卷

关键词：

Trench; Polysilicon; Chemical Mechanical Polishing; Polysilicon Layer; Hard Mask;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The paper proposes and validates a low-cost technological process for the realization of mono-crystalline micro-electro-mechanical (MEM) resonators with deep sub-micron transduction gaps, on silicon-on-insulator (SOI) substrates. The MEM resonators are designed to work as bulk lateral resonators (BLR) in which the resonance of a suspended mass is excited and detected by lateral electrodes. For MEM BLRs, nano-scaled gaps (<200 nm) are essential to reduce the motional resistance in the order of few kΩ as well as to avoid the use of large DC applied voltages. Only standard optical lithography with 1 μm resolution and IC-compatible processing steps are employed to obtain 100–200 nm wide gaps with very high aspect-ratios of more than [40:1], allowing the fabrication of high Q resonators for MHz to GHz operating frequency range.

引用

页码：1489 / 1493

页数：4

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