Fabrication-robust silicon photonic devices in standard sub-micron silicon-on-insulator processes

被引:9
|
作者
Rizzo, A. N. T. H. O. N. Y. [1 ,2 ]
Dave, U. T. S. A., V [1 ]
Novick, A. S. H. E. R. [1 ]
Freitas, A. L. E. X. A. N. D. R. E. [1 ]
Roberts, Samantha P.
James, A. N. E. E. K. [1 ]
Lipson, M. I. C. H. A. L. [1 ]
Bergman, K. E. R. E. N. [1 ]
机构
[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
[2] Air Force Res Lab Informat, New York, NY 13441 USA
关键词
WAVE-GUIDE BENDS;
D O I
10.1364/OL.476873
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geom-etry plague high index-contrast photonic platforms; this includes the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such variations are particularly trouble-some for phase-sensitive devices, such as interferometers and resonators, which exhibit drastic changes in perfor-mance as a result of these fabrication-induced phase errors. In this Letter, we propose and experimentally demonstrate a design methodology for dramatically reducing device sensitivity to silicon width variations. We apply this method-ology to a highly phase-sensitive device, the ring-assisted Mach-Zehnder interferometer (RAMZI), and show compa-rable performance and footprint to state-of-the-art devices, while substantially reducing stochastic phase errors from etch variations. This decrease in sensitivity is directly real-ized as energy savings by significantly reducing the required corrective thermal tuning power, providing a promising path toward ultra-energy-efficient large-scale silicon photonic cir-cuits. (c) 2023 Optica Publishing Group
引用
收藏
页码:215 / 218
页数:4
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