Resistance of 4H-SiC Schottky barriers at high forward-current densities

被引：0
|
作者：
P. A. Ivanov
T. P. Samsonova
N. D. Il’inskaya
O. Yu. Serebrennikova
O. I. Kon’kov
A. S. Potapov
机构：
[1] Russian Academy of Sciences,Ioffe Physical–Technical Institute
来源：
Semiconductors | 2015年 / 49卷
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摘要：
The resistance of Schottky barriers based on 4H-SiC is experimentally determined at high forward-current densities. The measured resistance is found to be significantly higher than the resistance predicted by classical mechanisms of electron transport in Schottky contacts. An assumption concerning the crucial contribution of the tunnel-transparent intermediate oxide layer between the metal and semiconductor to the barrier resistance is proposed and partially justified.
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页码：930 / 934
页数：4
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