Investigation of aged organic solar cell stacks by cross-sectional transmission electron microscopy coupled with elemental analysis

被引:0
|
作者
P. Favia
E. Voroshazi
P. Heremans
H. Bender
机构
[1] IMEC,ESAT
[2] Katholieke Universiteit Leuven,undefined
来源
关键词
Organic Solar Cell; Phase Segregation; Transmission Electron Microscope Specimen; Solar Cell Device; Fast Fourier Transform Pattern;
D O I
暂无
中图分类号
学科分类号
摘要
Polymer solar cells are of great interest as candidates for future low-cost and lightweight energy sources. One of the major reliability problems of these devices is the thermal instability of the blend morphology typically composed of poly(3-hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester (P3HT and PCBM, respectively). Phase segregation of the blend has been extensively investigated by transmission electron microscopy (TEM) on free-standing films. In this study, we investigate in cross-section the morphology reorganization of P3HT:PCBM layers confined between poly(3,4-ethylenedioxythiophene)poly-(styrenesulfonate) (PEDOT:PSS) and a metal electrode similar to functional solar cell devices. The strengths of different TEM imaging and compositional analysis modes for the investigation of organic solar cells is illustrated by studying the evolution of the material stack with ageing conditions. Combining TEM imaging of the layer stack with energy-dispersive X-ray and energy loss electron spectroscopy, we not only gain insight into the phase segregation process but also explore the interdiffusion in the layer stack. More than 100 °C annealing leads to the formation of elongated protrusions ranging 100–500 nm. Thinning of the neighboring areas indicates lateral diffusion in the stack. Interestingly, the metal cathode remains still conformal over these large aggregates. The particles protrude through the metal layer only after prolonged (>100 h) annealing at higher temperatures when they reach several micrometer in height and are identified as crystalline PCBM-like material. Hence, almost full phase separation occurs by PCBM agglomeration and diffusion over large distances. Elemental analysis confirms that diffusion of the electrode materials (In, Sn and Yb) into the P3HT:PCBM stack remains below the detection limit.
引用
收藏
页码:2908 / 2919
页数:11
相关论文
共 50 条
  • [31] Structural investigation of keV Ar-ion-induced surface ripples in Si by cross-sectional transmission electron microscopy
    Chini, TK
    Okuyama, F
    Tanemura, M
    Nordlund, K
    PHYSICAL REVIEW B, 2003, 67 (20)
  • [32] Investigation of Mo/Si and W/Si interfaces by phase modulated spectroscopic ellipsometry and cross-sectional transmission electron microscopy
    Bhattacharyya, D
    Poswal, AK
    Dey, GK
    Das, NC
    VACUUM, 2004, 76 (01) : 31 - 36
  • [33] Cross-sectional transmission electron microscopy investigation of the dead layer of ZnS:Ag,Al phosphors in field emission displays
    Kajiwara, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (04): : 1083 - 1089
  • [34] Observations of nanoindents via cross-sectional transmission electron microscopy: a survey of deformation mechanisms
    Lloyd, SJ
    Castellero, A
    Giuliani, F
    Long, Y
    McLaughlin, KK
    Molina-Aldareguia, JM
    Stelmashenko, NA
    Vandeperre, LJ
    Clegg, WJ
    PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2005, 461 (2060): : 2521 - 2543
  • [35] Transmission electron microscopy study on the cross-sectional microstructure of an ion-nitriding layer
    Xu, XL
    Wang, L
    Yu, ZW
    Hei, ZK
    METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1996, 27 (05): : 1347 - 1352
  • [36] CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OF ELECTRODEPOSITED NI-P ALLOYS
    SHIMIZU, K
    THOMPSON, GE
    WOOD, GC
    KOBAYASHI, K
    PHILOSOPHICAL MAGAZINE LETTERS, 1990, 61 (02) : 43 - 48
  • [37] A reliable approach to prepare brittle semiconducting materials for cross-sectional transmission electron microscopy
    Dycus, J. H.
    Lebeau, J. M.
    JOURNAL OF MICROSCOPY, 2017, 268 (03) : 225 - 229
  • [38] Characterization of heterointerfaces in thin-film transistors by cross-sectional transmission electron microscopy
    Kuroda, K
    Tsuji, S
    Hayashi, Y
    Saka, H
    ATOMIC RESOLUTION MICROSCOPY OF SURFACES AND INTERFACES, 1997, 466 : 67 - 72
  • [39] ELECTRON-SCATTERING FROM SI SURFACE AND INTERFACE BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY
    MIYATAKE, H
    YONEDA, M
    MURAYAMA, K
    HARADA, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (11): : 6406 - 6409
  • [40] Cross-Sectional Transmission Electron Microscopy Analysis of Nanogap Electrode Fabricated by Atomic Force Microscope Local Oxidation
    Moriya, Rai
    Ikenaga, Eriko
    Masubuchi, Satoru
    Machida, Tomoki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (05)