Study of thermal parameters of nanocrystalline silicon carbide (3C-SiC) using DSC spectroscopy

被引：0

作者：

Elchin M. Huseynov

Tural G. Naghiyev

机构：

[1] National Nuclear Research Center,Department of Nanotechnology and Radiation Material Science

[2] Institute of Radiation Problems of Azerbaijan National Academy of Sciences,undefined

[3] Azerbaijan State University of Economics (UNEC),undefined

来源：

Applied Physics A | 2021年 / 127卷

关键词：

Nanocrystalline 3C-SiC; Nanomaterials; Thermal parameters; Arrhenius equation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Thermal properties of nanocrystalline silicon carbide (3C-SiC) particles were performed depending on the thermal processing rate. The kinetical parameters (heat flux, oxidation reaction rate and activation energy) of thermal effects occurring in the silicon carbide nanoparticles with 99.5 +% purity have been determined by 5, 10, 15 and 20 K/min heating rate in the temperature range of 300–1270 K. Activation energies of nanocrystalline 3C-SiC particles were calculated by Arrhenius approximation at different thermal processing rates.

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