Diffusion properties of plastically deformed silicon crystals

被引：0
|
作者：
M. A. Aliev
Kh. O. Alieva
V. V. Seleznev
机构：
[1] Russian Academy of Sciences,Institute of Physics, Daghestan Science Center
来源：
Physics of the Solid State | 1999年 / 41卷
关键词：
Spectroscopy; Silicon; Indium; State Physics; Impurity Atom;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of dislocations generated by electroplastic strain on the electric-field-driven transport of impurity atoms of indium in single crystals of P-silicon is investigated experimentally. It is shown that when electrodiffusion of indium and strain are induced simultaneously, the impurity ions are preferentially dragged towards the anode.
引用
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页码：936 / 937
页数：1
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