Dual-band asymmetric transmission based on electromagnetically induced transparency (EIT) effect in a microstrip transmission line

A dual-band asymmetric transmission device based on the nonlinear electromagnetically induced transparency (EIT) effect is presented in this paper. The device structure is composed of two P-type branches and two split ring resonators (SRRs). Dual-band EIT effect is induced based on the destructive interferences between scattering fields of the SRRs and branches in a microstrip transmission line system. Moreover, nonlinear varactor diodes and the asymmetric absorption resistor are added to EIT structure based on microstrip line couplings, which results in the asymmetric transmission property. The 10 dB and 7.5 dB transmission light contrasts at the frequencies of 0.85 GHz and 0.95 GHz with the input power of − 3 dBm are demonstrated experimentally. Such low-loss, broadband and high-contrast asymmetric transmission device results from the EIT mechanism, which possesses narrower, sharper and higher transmittance features. Such results will be very beneficial for new nonlinear electromagnetic devices.