Applications and simulation of unconventional bulk-micromachining using underetching of {100} silicon planes

被引:0
|
作者
G. Schröpfer
M. de Labachelerie
C. R. Tellier
机构
[1] SensoNor ASA,
[2] P.O. Box 1496,undefined
[3] N-3192 Horten,undefined
[4] Norway,undefined
[5] LPMO-CNRS,undefined
[6] Institute des Microtechniques de Franche-Comté (IMFC),undefined
[7] 32 Avenue de l’observatoire,undefined
[8] F-25044,undefined
[9] Besançon Cedex,undefined
[10] France,undefined
[11] LCEP,undefined
[12] Institute des Microtechniques de Franche-Comté (IMFC) 26 Chemin de l’Epitaphe,undefined
[13] F-25030 Besançon Cedex,undefined
[14] France,undefined
来源
关键词
Silicon; Silicon Wafer; Mechanical Performance; Etching Process; Etching Technique;
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学科分类号
摘要
 In this paper we present the principle and feasibility of bulk-micromachining using underetching of vertical {1 0 0} Silicon planes. Beside the demonstration of realized devices we investigate the fabrication reproducibility of these devices by simulating the anisotropic etching process for different cases of mask misalignment and crystal misorientation of the silicon wafer. Devices fabricated by the proposed etching technique can be reproduced within variations in mechanical performance lower than 3% if precautions such as an adapted design or pre-etching are considered.
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页码:194 / 199
页数:5
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