Visible photoluminescence from silicon nanopowders produced by silicon evaporation in a high-power electron beam

被引:0
|
作者
M. D. Efremov
V. A. Volodin
D. V. Marin
S. A. Arzhannikova
S. V. Goryainov
A. I. Korchagin
V. V. Cherepkov
A. V. Lavrukhin
S. N. Fadeev
R. A. Salimov
S. P. Bardakhanov
机构
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Division
[2] Russian Academy of Sciences,Institute of Mineralogy and Petrography, Siberian Division
[3] Russian Academy of Sciences,Budker Institute of Nuclear Physics, Siberian Division
[4] Russian Academy of Sciences,Institute of Theoretical and Applied Mechanics, Siberian Division
关键词
63.22.+m; 78.40.Fy; 78.55.−m; 81.15.−z;
D O I
暂无
中图分类号
学科分类号
摘要
Silicon nanopowders produced by electron-beam-induced evaporation of a bulk silicon sample in an argon atmosphere are studied by the photoluminescence technique and Raman scattering spectroscopy. A photoluminescence peak in the visible region of the spectrum has been detected at room temperature in powders consisting of silicon nanocrystals. The strong short-wavelength shift of the photoluminescence peak can be attributed to the quantum size effect of electrons and holes in small silicon nanocrystals (about 2 nm). The size of silicon nanocrystals is determined by analyzing Raman spectra, and it is consistent with estimates obtained from photoluminescence data.
引用
收藏
页码:544 / 547
页数:3
相关论文
共 50 条
  • [21] Visible photoluminescence from an anodized polycrystalline silicon thin film silicon structure
    Lyou, J
    Kim, E
    Min, S
    Kang, K
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1997, 30 : S269 - S272
  • [22] Irradiation of Monocrystalline Silicon with a High-Power Pulsed Beam of Carbon Ions and Protons
    Simakov, S. V.
    Vinogradova, N. A.
    Nikitushkina, O. N.
    Rumyantseva, S. B.
    Mikhailova, A. B.
    Tovtin, V. I.
    Starostin, E. E.
    Zhidkov, M. V.
    Ligachev, A. E.
    Potemkin, G. V.
    Remnev, G. E.
    Pavlov, S. K.
    INORGANIC MATERIALS-APPLIED RESEARCH, 2024, 15 (03) : 649 - 653
  • [23] Interstitials in silicon produced by electron beam doping (superdiffusion)
    Wada, T
    Hagino, T
    Fujimoto, H
    Masuda, H
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1613 - 1617
  • [24] Indium Assisted Growth of Silicon Nanowires by Electron beam evaporation
    Kumar, R. Rakesh
    Rao, K. Narasimha
    Rajanna, K.
    PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013), 2013, 1536 : 105 - 106
  • [25] Evaporation of phosphorus in molten silicon by an electron beam irradiation method
    Hanazawa, K
    Yuge, N
    Kato, Y
    MATERIALS TRANSACTIONS, 2004, 45 (03) : 844 - 849
  • [26] Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
    Xu, Xiangdong
    Li, Shibin
    Wang, Yinchuan
    Fan, Taijun
    Jiang, Yadong
    Huang, Long
    He, Qiong
    Ao, Tianhong
    NANOSCALE RESEARCH LETTERS, 2012, 7
  • [27] Bismuth catalyzed growth of silicon nanowires by electron beam evaporation
    Kumar, R. Rakesh
    Rao, K. Narasimha
    Phani, A. R.
    MATERIALS LETTERS, 2012, 82 : 163 - 166
  • [28] Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
    Xiangdong Xu
    Shibin Li
    Yinchuan Wang
    Taijun Fan
    Yadong Jiang
    Long Huang
    Qiong He
    Tianhong Ao
    Nanoscale Research Letters, 7
  • [29] Growth of shape controlled silicon nanowhiskers by electron beam evaporation
    Karakiz, Mehmet
    Toydemir, Burcu
    Unal, Bayram
    Arslan, Leyla Colakerol
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 65 (02):
  • [30] Evaporation of phosphorus in molten silicon with electron beam irradiation method
    Hanazawa, K
    Yuge, N
    Hiwasa, S
    Kato, Y
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 2003, 67 (10) : 569 - 574