Scanning tunneling microscopy of the nonequilibrium interaction of impurity states at semiconductor surfaces

被引：0

作者：

P. I. Arseev

N. S. Maslova

S. I. Oreshkin

V. I. Panov

S. V. Savinov

机构：

[1] Moscow State University,

来源：

Journal of Experimental and Theoretical Physics Letters | 2000年 / 72卷

关键词：

71.55.Eq; 61.16.Ch; 68.65.+g; 68.35.Bs; 73.20.Dx;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Interaction of two localized impurity states of Si atoms at a GaAs surface was studied by scanning tunneling microscopy and spectroscopy. The effects of a twofold “switching” on and off of the states of each of the interacting atoms, the tunneling-interaction-induced mutual level pulling of these states, and the level stabilization near EF were observed. These effects are explained in terms of the extended Anderson model.

引用

页码：565 / 568

页数：3

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