Influence of sputtering power on structural, electrical and optical properties of reactive magnetron sputtered Cr doped CdO thin films

被引:0
|
作者
B. Hymavathi
B. Rajesh Kumar
T. Subba Rao
机构
[1] Anil Neerukonda Institute of Technology and Sciences (Autonomous),Department of Physics
[2] GITAM University,Department of Physics, GITAM Institute of Technology
[3] Sri Krishnadevaraya University,Materials Research Lab, Department of Physics
来源
Journal of Materials Science: Materials in Electronics | 2017年 / 28卷
关键词
Oxygen Vacancy; Carrier Concentration; Optical Transmittance; Sheet Resistance; Seebeck Coefficient;
D O I
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中图分类号
学科分类号
摘要
Cr doped CdO thin films have been deposited on glass substrates by reactive DC magnetron sputtering method by varying sputtering powers from 70 to 100 W. X-ray diffraction peaks indicates that the films have preferred orientation along (2 0 0) plane with cubic structure. The intensity of (2 0 0) peak increased with the increase of sputtering power. The surface morphology and elemental analysis of the films was studied using field emission scanning electron microscopy and energy dispersive analysis by X-rays. A high optical transmittance of 91%, a low electrical resistivity of 2.30 × 10−4 Ω.cm and a minimum sheet resistance of 6.57 Ω/sq is obtained for the thin film deposited at sputtering power of 90 W. The optical band gap of the films is found to be decreased from 2.86 to 2.72 eV with the increase of sputtering power.
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页码:7509 / 7516
页数:7
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