Influence of sputtering power on structural, electrical and optical properties of reactive magnetron sputtered Cr doped CdO thin films

被引:0
|
作者
B. Hymavathi
B. Rajesh Kumar
T. Subba Rao
机构
[1] Anil Neerukonda Institute of Technology and Sciences (Autonomous),Department of Physics
[2] GITAM University,Department of Physics, GITAM Institute of Technology
[3] Sri Krishnadevaraya University,Materials Research Lab, Department of Physics
关键词
Oxygen Vacancy; Carrier Concentration; Optical Transmittance; Sheet Resistance; Seebeck Coefficient;
D O I
暂无
中图分类号
学科分类号
摘要
Cr doped CdO thin films have been deposited on glass substrates by reactive DC magnetron sputtering method by varying sputtering powers from 70 to 100 W. X-ray diffraction peaks indicates that the films have preferred orientation along (2 0 0) plane with cubic structure. The intensity of (2 0 0) peak increased with the increase of sputtering power. The surface morphology and elemental analysis of the films was studied using field emission scanning electron microscopy and energy dispersive analysis by X-rays. A high optical transmittance of 91%, a low electrical resistivity of 2.30 × 10−4 Ω.cm and a minimum sheet resistance of 6.57 Ω/sq is obtained for the thin film deposited at sputtering power of 90 W. The optical band gap of the films is found to be decreased from 2.86 to 2.72 eV with the increase of sputtering power.
引用
收藏
页码:7509 / 7516
页数:7
相关论文
共 50 条
  • [1] Influence of sputtering power on structural, electrical and optical properties of reactive magnetron sputtered Cr doped CdO thin films
    Hymavathi, B.
    Kumar, B. Rajesh
    Rao, T. Subba
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (10) : 7509 - 7516
  • [2] STUDIES ON STRUCTURAL AND OPTICAL PROPERTIES OF DC REACTIVE MAGNETRON SPUTTERED Cr DOPED CdO THIN FILMS
    Hymavathi, B.
    Kumar, B. Rajesh
    Rao, T. Subba
    JOURNAL OF OVONIC RESEARCH, 2014, 10 (06): : 237 - 245
  • [3] Effect of thermal annealing on structural, optical and electrical properties of RF reactive magnetron sputtered CdO thin films
    Kumar, Gadipelly Anil
    Reddy, Musugu Ramana
    Reddy, Katta Narasimha
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 68 (01):
  • [4] Effects of sputtering power on structural, electrical and optical properties of Cr-doped ZnO thin films prepared by magnetron sputtering
    Chang-Feng Fu
    Lian-Fu Han
    Chao Liu
    Journal of Materials Science: Materials in Electronics, 2015, 26 : 493 - 497
  • [5] Effects of sputtering power on structural, electrical and optical properties of Cr-doped ZnO thin films prepared by magnetron sputtering
    Fu, Chang-Feng
    Han, Lian-Fu
    Liu, Chao
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (01) : 493 - 497
  • [6] Structural, Electrical and Optical Properties of Cd Doped ZnO Thin Films by Reactive dc Magnetron Sputtering
    A. Guru Sampath Kumar
    L. Obulapathi
    T. Sofi Sarmash
    D. Jhansi Rani
    M. Maddaiah
    T. Subba Rao
    K. Asokan
    JOM, 2015, 67 : 834 - 839
  • [7] Structural, Electrical and Optical Properties of Cd Doped ZnO Thin Films by Reactive dc Magnetron Sputtering
    Kumar, A. Guru Sampath
    Obulapathi, L.
    Sarmash, T. Sofi
    Rani, D. Jhansi
    Maddaiah, M.
    Rao, T. Subba
    Asokan, K.
    JOM, 2015, 67 (04) : 834 - 839
  • [8] Influence of sputtering power on structural, optical and electrical properties of CdTe thin films prepared by DC magnetron sputtering
    Gu, Peng
    Zhu, Xinghua
    Li, Jitao
    Wu, Haihua
    Yang, Dingyu
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (17) : 14635 - 14642
  • [9] Effect of film thickness on physical properties of DC reactive magnetron sputtered Cr doped CdO thin films
    Hymavathi, B.
    Kumar, B. Rajesh
    Rao, T. Subba
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2015, 17 (1-2): : 160 - 164
  • [10] Influence of sputtering power on structural, optical and electrical properties of CdTe thin films prepared by DC magnetron sputtering
    Peng Gu
    Xinghua Zhu
    Jitao Li
    Haihua Wu
    Dingyu Yang
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 14635 - 14642