Stochastic simulation of electron-hole recombination in two-dimensional and three-dimensional inhomogeneous semiconductors. Part I. Stochastic model and algorithms

被引：0

作者：

Sabelfeld K.K. ^{[1
]}

Kireeva A.E. ^{[1
]}

机构：

[1] Institute of Computational Mathematics and Mathematical Geophysics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’ev 6, Novosibirsk

来源：

Optoelectronics, Instrumentation and Data Processing | 2017年 / 53卷 / 1期

关键词：

cellular automation; diffusion; recombination; semiconductor; stochastic simulation; tunneling;

D O I：

10.3103/S8756699017010149

中图分类号：

学科分类号：

摘要：

This paper describes the stochastic models of electron-hole recombination in inhomogeneous semiconductors in two-dimensional and three-dimensional cases, which were developed on the basis of discrete (cellular automation) and continuous (Monte Carlo method) approaches. The mathematical model of electron-hole recombination, constructed on the basis of a system of spatially inhomogeneous nonlinear integro-differential Smoluchowski equations, is illustrated. The continuous algorithm of the Monte Carlo method and the discrete cellular automation algorithm used for the simulation of particle recombination in semiconductors are shown. © 2017, Allerton Press, Inc.

引用

页码：96 / 102

页数：6

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