Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity

被引:0
|
作者
L. N. Oveshnikov
E. I. Nekhaeva
机构
[1] National Research Center “Kurchatov Institute”,Lebedev Physical Institute
[2] Russian Academy of Sciences,undefined
来源
Semiconductors | 2017年 / 51卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Magnetotransport in heterostructures with spatial separation of the Mn magnetic impurity and an InGaAs quantum well is studied. An analysis of the observed effect of weak localization using the Hikami–Larkin–Nagaoki formula leads to an anomalously small value (0.4) of the prefactor. Obtained data indicate that inelastic e–e scattering can be the dominant dephasing mechanism in the structures under study. Analysis of the conductivity and magnetoresistance indicates the dominant role of spin-dependent scattering at fluctuations in the magnetic subsystem, which is consistent with an increase in the amplitude of the negative magnetoresistance and an increase in the Drude conductivity as a result of cooling. The nature of the anomalous Hall effect in the studied structures is investigated; in particular, indications are obtained that there is the presence of a topological contribution at low temperatures.
引用
收藏
页码:1313 / 1320
页数:7
相关论文
共 50 条
  • [1] Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity
    Oveshnikov, L. N.
    Nekhaeva, E. I.
    [J]. SEMICONDUCTORS, 2017, 51 (10) : 1313 - 1320
  • [2] ABSENCE OF QUANTUM CORRECTIONS TO THE ANOMALOUS HALL CONDUCTIVITY
    LANGENFELD, A
    WOLFLE, P
    [J]. PHYSICAL REVIEW LETTERS, 1991, 67 (06) : 739 - 741
  • [3] Quantum corrections to conductivity under conditions of the integer quantum Hall effect
    A. A. Greshnov
    [J]. Semiconductors, 2012, 46 : 759 - 768
  • [4] Quantum corrections to conductivity under conditions of the integer quantum Hall effect
    Greshnov, A. A.
    [J]. SEMICONDUCTORS, 2012, 46 (06) : 759 - 768
  • [5] Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells
    Wang, Qing-Ze
    Liu, Xin
    Zhang, Hai-Jun
    Samarth, Nitin
    Zhang, Shou-Cheng
    Liu, Chao-Xing
    [J]. PHYSICAL REVIEW LETTERS, 2014, 113 (14)
  • [6] Quantum anomalous Hall effect in Hg1-yMnyTe quantum wells
    Liu, Chao-Xing
    Qi, Xiao-Liang
    Dai, Xi
    Fang, Zhong
    Zhang, Shou-Cheng
    [J]. PHYSICAL REVIEW LETTERS, 2008, 101 (14)
  • [7] Observation of the photoinduced anomalous Hall effect spectra in insulating InGaAs/AlGaAs quantum wells at room temperature
    Yu, J. L.
    Chen, Y. H.
    Jiang, C. Y.
    Liu, Y.
    Ma, H.
    Zhu, L. P.
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (14)
  • [8] Quantum Spin Hall and Quantum Anomalous Hall States Realized in Junction Quantum Wells
    Zhang, Haijun
    Xu, Yong
    Wang, Jing
    Chang, Kai
    Zhang, Shou-Cheng
    [J]. PHYSICAL REVIEW LETTERS, 2014, 112 (21)
  • [9] Anomalous Hall conductivity and quantum friction
    Streda, Pavel
    Vyborny, Karel
    [J]. PHYSICAL REVIEW B, 2023, 107 (01)
  • [10] Quantum effects in magnetotransport of InGaAs quantum wells with remote Mn impurities
    Oveshnikov, Leonid
    Morgun, Leonid
    Nekhaeva, Elena
    Kulbachinskii, Vladimir
    Aronzon, Boris
    [J]. MOSCOW INTERNATIONAL SYMPOSIUM ON MAGNETISM (MISM 2017), 2018, 185