Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity

被引:5
|
作者
Oveshnikov, L. N. [1 ,2 ]
Nekhaeva, E. I. [1 ,2 ]
机构
[1] Natl Res Ctr Kurchatov Inst, Moscow 123182, Russia
[2] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia
关键词
MECHANISM; LAYER;
D O I
10.1134/S1063782617100177
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Magnetotransport in heterostructures with spatial separation of the Mn magnetic impurity and an InGaAs quantum well is studied. An analysis of the observed effect of weak localization using the Hikami-Larkin-Nagaoki formula leads to an anomalously small value (0.4) of the prefactor. Obtained data indicate that inelastic e-e scattering can be the dominant dephasing mechanism in the structures under study. Analysis of the conductivity and magnetoresistance indicates the dominant role of spin-dependent scattering at fluctuations in the magnetic subsystem, which is consistent with an increase in the amplitude of the negative magnetoresistance and an increase in the Drude conductivity as a result of cooling. The nature of the anomalous Hall effect in the studied structures is investigated; in particular, indications are obtained that there is the presence of a topological contribution at low temperatures.
引用
收藏
页码:1313 / 1320
页数:8
相关论文
共 50 条
  • [1] Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity
    L. N. Oveshnikov
    E. I. Nekhaeva
    [J]. Semiconductors, 2017, 51 : 1313 - 1320
  • [2] ABSENCE OF QUANTUM CORRECTIONS TO THE ANOMALOUS HALL CONDUCTIVITY
    LANGENFELD, A
    WOLFLE, P
    [J]. PHYSICAL REVIEW LETTERS, 1991, 67 (06) : 739 - 741
  • [3] Quantum corrections to conductivity under conditions of the integer quantum Hall effect
    A. A. Greshnov
    [J]. Semiconductors, 2012, 46 : 759 - 768
  • [4] Quantum corrections to conductivity under conditions of the integer quantum Hall effect
    Greshnov, A. A.
    [J]. SEMICONDUCTORS, 2012, 46 (06) : 759 - 768
  • [5] Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells
    Wang, Qing-Ze
    Liu, Xin
    Zhang, Hai-Jun
    Samarth, Nitin
    Zhang, Shou-Cheng
    Liu, Chao-Xing
    [J]. PHYSICAL REVIEW LETTERS, 2014, 113 (14)
  • [6] Quantum anomalous Hall effect in Hg1-yMnyTe quantum wells
    Liu, Chao-Xing
    Qi, Xiao-Liang
    Dai, Xi
    Fang, Zhong
    Zhang, Shou-Cheng
    [J]. PHYSICAL REVIEW LETTERS, 2008, 101 (14)
  • [7] Observation of the photoinduced anomalous Hall effect spectra in insulating InGaAs/AlGaAs quantum wells at room temperature
    Yu, J. L.
    Chen, Y. H.
    Jiang, C. Y.
    Liu, Y.
    Ma, H.
    Zhu, L. P.
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (14)
  • [8] Quantum Spin Hall and Quantum Anomalous Hall States Realized in Junction Quantum Wells
    Zhang, Haijun
    Xu, Yong
    Wang, Jing
    Chang, Kai
    Zhang, Shou-Cheng
    [J]. PHYSICAL REVIEW LETTERS, 2014, 112 (21)
  • [9] Anomalous Hall conductivity and quantum friction
    Streda, Pavel
    Vyborny, Karel
    [J]. PHYSICAL REVIEW B, 2023, 107 (01)
  • [10] Quantum effects in magnetotransport of InGaAs quantum wells with remote Mn impurities
    Oveshnikov, Leonid
    Morgun, Leonid
    Nekhaeva, Elena
    Kulbachinskii, Vladimir
    Aronzon, Boris
    [J]. MOSCOW INTERNATIONAL SYMPOSIUM ON MAGNETISM (MISM 2017), 2018, 185