Exploring Exemplary Optoelectronic and Charge Transport Properties of KCuX(X=Se,Te)

被引:0
|
作者
Atahar Parveen
G. Vaitheeswaran
机构
[1] University of Hyderabad,Advanced Centre of Research in High Energy Materials (ACRHEM)
[2] University of Hyderabad,School of Physics
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
We report the electronic structure, optical and charge transport properties of the unexplored ternary Zintl phases KCuX(X=Se,Te) from the first principles calculations employing the full-potential linearized augmented plane-wave (FLAPW) method with the Tran Blaha modified Becke-Johnson (TBmBJ) potential. It is demonstrated that the materials are direct band gap (1.13, 1.38 eV) semiconductors with covalent bonding between Cu and (Se/Te). The calculated low effective mass and high carrier mobility (over 105 cm2/V.s) accentuate that KCuX have good carrier transport and the materials may have possible applications in solar cell absorbers and nanoelectronic devices. Absorption spectra indicates that the ternary crystals are UV-A light absorbers and could be useful in photovoltaic and photodetector applications. A study on the effect of pressure (till 5 GPa) is carried out in order to further explore the materials for their electronic band gaps and charge transport properties as they are proposed to be useful in future contemporary electronic devices. It is observed that pressure enhances the intrinsic carrier mobility and thermal stability of KCuX, indicating that the materials can withstand robust external conditions.
引用
收藏
相关论文
共 50 条
  • [11] Thermal Transport and Mechanical Properties of Layered Oxychalcogenides LaCuOX (X = S, Se, and Te)
    Wang, Ning
    Shen, Chen
    Sun, Zhehao
    Li, Bingke
    Xiao, Haiyan
    Zu, Xiaotao
    Zhang, Hongbin
    Yin, Zongyou
    Qiao, Liang
    ACS APPLIED ENERGY MATERIALS, 2022, 5 (06): : 6943 - 6951
  • [12] Pressure dependence of elastic properties of ZnX (X = Se, S and Te): Role of charge transfer
    Varshney, D
    Sharma, P
    Kaurav, N
    Singh, RK
    BULLETIN OF MATERIALS SCIENCE, 2005, 28 (07) : 651 - 661
  • [13] Pressure dependence of elastic properties of ZnX (X = Se,S and Te): Role of charge transfer
    Dinesh Varshney
    P. Sharma
    N. Kaurav
    R. K. Singh
    Bulletin of Materials Science, 2005, 28 : 651 - 661
  • [14] Exploring the Multifaceted Nature of TaCu3X4(X = S, Se, Te) Materials: A DFT Study Revealing Promising Structural, Optoelectronic, Thermodynamic and Thermoelectric Properties
    Tauqeer, Muhammad
    Mubashir, Muhammad
    Khan, Dilbar
    Saeedi, Ahmad M.
    Althomali, Raed H.
    Solre, Gideon F. B.
    Mazhar, Muhammad Ehsan
    Alghamdi, Majed M.
    El-Zahhar, Adel A.
    Asif, Sana Ullah
    Iqbal, Muhammad Asif
    JOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS, 2025, 35 (01) : 420 - 438
  • [15] Tuning the optoelectronic properties of graphene monoxide by electric field, strain and heterostructure with CdX (X=S, Se or Te)
    Thomas, Santy M.
    Ravindran, P.
    SURFACES AND INTERFACES, 2024, 52
  • [16] Transport properties of Ge-Se-Te glasses
    Kaluzny, J
    Lezal, D
    Mariani, E
    Zavadil, J
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2004, 6 (02): : 421 - 427
  • [17] Transport properties in Se-Te-Ge glasses
    ElMandouh, ZS
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (12) : 7158 - 7162
  • [18] Charge transport in melts of a Tl-Te-Se triple system
    Kazandzhan, B.I.
    Matveev, V.M.
    Teplofizika Vysokikh Temperatur, 1994, 32 (03): : 373 - 377
  • [19] Exploring the transport and optoelectronic properties of silicon diselenide monolayer
    Somaiya, Radha N.
    Sonvane, Yogesh
    Gupta, Sanjeev K.
    SUPERLATTICES AND MICROSTRUCTURES, 2021, 150 (150)
  • [20] Exploring of Be 1-x Cr x Se alloys for spintronics and optoelectronic applications
    Ambreen, H.
    Saleem, S.
    Aldaghfag, S. A.
    Zahid, M.
    Noreen, S.
    Ishfaq, M.
    Yaseen, M.
    CHALCOGENIDE LETTERS, 2024, 21 (04): : 365 - 375