Nonradiative recombination and kinetics of optically oriented electrons at the GaAs/AlGaAs interface

被引：0
|
作者：
R. I. Dzhioev
K. V. Kavokin
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Physics of the Solid State | 2003年 / 45卷
关键词：
Spectroscopy; State Physics; Recombination; Stationary Regime; Optical Orientation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is shown that optical orientation of electron spins in semiconductors can be used as a basis to develop a high-sensitivity method for measuring the dependence of the lifetime of carriers on their concentration. Experiments performed in a stationary regime on a GaAs/AlGaAs heterostructure at low excitation levels provided insight into the nonradiative recombination of electrons and holes separated by an electric field built into the interface.
引用
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页码：1644 / 1647
页数：3
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