Physicochemical properties of amorphous silicon dioxide produced from nepheline

被引：0
|
作者：
V. A. Matveev
V. I. Zakharov
D. B. Mayorov
T. V. Kondratenko
机构：
[1] Russian Academy of Sciences,Tananaev Institute of Chemistry and Technology of Rare Elements and Mineral Raw Materials, Kola Scientific Center
来源：
Russian Journal of Inorganic Chemistry | 2011年 / 56卷
关键词：
Amorphous Silica; Nepheline; Water Retention Capacity; Liquid Glass; Weight Loss Curve;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The properties of silicon dioxide precipitates produced by acid processing of nepheline have been investigated. Regardless of the production method, silicon dioxide takes an intermediate position between commercial silica gel and white soot in terms of the structure and some physicochemical properties, this position determining possible applications of this product.
引用
收藏
页码：338 / 340
页数：2
相关论文
共 50 条
  • [31] OPTICAL-PROPERTIES OF THIN AMORPHOUS-SILICON AND AMORPHOUS HYDROGENATED SILICON FILMS PRODUCED BY ION-BEAM TECHNIQUES
    MARTIN, PJ
    NETTERFIELD, RP
    SAINTY, WG
    MCKENZIE, DR
    THIN SOLID FILMS, 1983, 100 (02) : 141 - 147
  • [32] TRANSPORT-PROPERTIES OF PLASMA-DEPOSITED AMORPHOUS-SILICON DIOXIDE
    MARIUCCI, L
    FORTUNATO, G
    FOGLIETTI, P
    REITA, C
    DELLASALA, D
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 115 (1-3) : 123 - 125
  • [33] Properties of an amorphous silicon dioxide nanopowder prepared by pulsed electron beam evaporation
    Il'ves, V. G.
    Zuev, M. G.
    Sokovnin, S. Yu.
    Murzakaev, A. M.
    PHYSICS OF THE SOLID STATE, 2015, 57 (12) : 2512 - 2518
  • [34] Optical and electronic properties of amorphous silicon dioxide by single and double electron spectroscopy
    Astasauskas, Vytautas
    Bellissimo, Alessandra
    Kuksa, Pavel
    Tomastik, Christian
    Kalbe, Henryk
    Werner, Wolfgang S. M.
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2020, 241
  • [35] Properties of an amorphous silicon dioxide nanopowder prepared by pulsed electron beam evaporation
    V. G. Il’ves
    M. G. Zuev
    S. Yu. Sokovnin
    A. M. Murzakaev
    Physics of the Solid State, 2015, 57 : 2512 - 2518
  • [36] OPTICAL-PROPERTIES OF AMORPHOUS-SILICON DIOXIDE-BASE SYSTEMS
    EREMENKO, AM
    SMIRNOVA, NP
    TROPINOV, AG
    UKRAINSKII FIZICHESKII ZHURNAL, 1982, 27 (10): : 1510 - 1513
  • [37] Thickness dependence and crystallization properties of amorphous GeTe thin films on silicon dioxide
    Zhou, Zhengquan
    Wu, Weihua
    Li, Yu
    Zhai, Jiwei
    PHYSICA SCRIPTA, 2024, 99 (10)
  • [38] Structural and optical properties of amorphous hydrogenated silicon carbonitride films produced by PECVD
    Vassallo, E.
    Cremona, A.
    Ghezzi, F.
    Dellera, F.
    Laguardia, L.
    Ambrosone, G.
    Coscia, U.
    APPLIED SURFACE SCIENCE, 2006, 252 (22) : 7993 - 8000
  • [39] PROPERTIES OF AMORPHOUS-SILICON PRODUCED BY ION-IMPLANTATION - THERMAL ANNEALING
    SPITZER, WG
    HUBLER, GK
    KENNEDY, TA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 309 - 312
  • [40] PHOTO-VOLTAIC PROPERTIES OF UNDOPED DISCHARGE-PRODUCED AMORPHOUS SILICON
    WRONSKI, CR
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 299 - 305
12345