Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice

被引：0
|
作者：
Mikhail Sobolev
Mikhail Buyalo
Idris Gadzhiev
Ilya Bakshaev
Yurii Zadiranov
Efim Portnoi
机构：
[1] Russian Academy of Sciences,Ioffe Physical Technical Institute
来源：
Nanoscale Research Letters | / 7卷
关键词：
Mode-locking; Laser; Polarization; Quantum dots; Superlattice; In(Ga) As/GaAs;
D O I：
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中图分类号：
学科分类号：
摘要：
Passive mode-locking is achieved in two sectional lasers with an active layer based on superlattice formed by ten layers of quantum dots. Tunnel coupling of ten layers changes the structural polarization properties: the ratio between the transverse electric and transverse magnetic polarization absorption coefficients is less by a factor of 1.8 in the entire electroluminescence spectrum range for the superlattice.
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