Photoluminescence and degradation properties of carbonized porous silicon

被引:0
|
作者
B. M. Kostishko
Sh. R. Atazhanov
S. N. Mikov
机构
[1] Ulyanovsk State University,
来源
Technical Physics Letters | 1998年 / 24卷
关键词
Silicon; Spectral Characteristic; Porous Silicon; Spectral Peak; Carbonize Sample;
D O I
暂无
中图分类号
学科分类号
摘要
A promising new method of modifying the spectral characteristics of porous silicon and stabilizing its photoluminescence is proposed using high-temperature carbonization. Investigations have shown that carbonized samples exhibit stable photoluminescence and the spectral peak is shifted into the rf-blue range.
引用
下载
收藏
页码:633 / 635
页数:2
相关论文
共 50 条
  • [41] LIGHT-INDUCED DEGRADATION AND RECOVERY OF VISIBLE PHOTOLUMINESCENCE IN POROUS SILICON
    NISHITANI, H
    NAKATA, H
    FUJIWARA, Y
    OHYAMA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (11B): : L1577 - L1579
  • [42] Light-induced degradation and recovery of visible photoluminescence in porous silicon
    Nishitani, Hikaru
    Nakata, Hiroyasu
    Fujiwara, Yasufumi
    Ohyama, Tyuzi
    Japanese Journal of Applied Physics, Part 2: Letters, 1992, 31 (11 B):
  • [43] Anomalous Long-Term Degradation of Photoluminescence in Porous Silicon Layers
    Timokhov, D. F.
    Timokhov, F. P.
    SEMICONDUCTORS, 2011, 45 (06) : 788 - 791
  • [44] Photoluminescence enhancement and degradation in porous silicon: Evidence for nonconventional photoinduced defects
    ElHouichet, H
    Oueslati, M
    Bessais, B
    Ezzaouia, H
    JOURNAL OF LUMINESCENCE, 1997, 71 (01) : 77 - 82
  • [45] Photoluminescence degradation in porous silicon upon annealing at high temperature in vacuum
    Shin, HJ
    Lee, MK
    Hwang, CC
    Kim, KJ
    Kang, TH
    Kim, B
    Kim, GB
    Hong, CK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 (06) : 808 - 813
  • [46] Anomalous long-term degradation of photoluminescence in porous silicon layers
    D. F. Timokhov
    F. P. Timokhov
    Semiconductors, 2011, 45
  • [47] OPTICAL-PROPERTIES OF POROUS SILICON AND SMALL SILICON CLUSTERS - SEARCH FOR THE ORIGIN OF VISIBLE PHOTOLUMINESCENCE OF POROUS SILICON
    KANEMITSU, Y
    SUZUKI, K
    UTO, H
    MASUMOTO, Y
    HIGUCHI, K
    KYUSHIN, S
    MATSUMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B): : 408 - 410
  • [48] Humidity behavior of thermally carbonized porous silicon
    Björkqvist, M
    Salonen, J
    Laine, E
    APPLIED SURFACE SCIENCE, 2004, 222 (1-4) : 269 - 274
  • [49] Photoluminescence and photoluminescence excitation mechanisms for porous silicon and silicon oxynitride
    Liu, XS
    Calata, JN
    Liang, HY
    Shi, WZ
    Lin, XY
    Lin, KX
    Qin, GG
    OPTICAL MICROSTRUCTURAL CHARACTERIZATION OF SEMICONDUCTORS, 2000, 588 : 141 - 146
  • [50] Photoluminescence Properties of Porous Silicon with CdSe/ZnS Quantum Dots
    Jarimaviciute-Zvalioniene, Renata
    Waluk, Jacek
    Prosycevas, Igoris
    MATERIALS SCIENCE-MEDZIAGOTYRA, 2011, 17 (03): : 232 - 235