Comparison of the Growth Processes of Germanium Quantum Dots on the Si(100) and Si(111) Surfaces

被引：0
|
作者：
A. P. Kokhanenko
K. A. Lozovoy
A. V. Voitsekhovskii
机构：
[1] National Research Tomsk State University,
来源：
Russian Physics Journal | 2018年 / 60卷
关键词：
quantum dots; silicon; germanium; tin; nanoheterostructures; molecular-beam epitaxy; critical thickness; Stranski-Krastanov transition; surface density; size distribution function;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A comparative analysis is carried out of the growth peculiarities under molecular-beam epitaxy of germanium quantum dots on the silicon surfaces with different crystallographic orientations Si(100) and Si(111), including the case of the presence of tin surfactant on the surface. The free energy change, activation barrier of nucleation, critical thickness of the transition from two-dimensional growth to three-dimensional one, as well as the surface density and size distribution function of quantum dots in these systems are calculated.
引用
收藏
页码：1871 / 1879
页数：8
相关论文
共 50 条
  • [41] STRUCTURAL CHARACTERIZATION OF CdTe/Si(111) QUANTUM DOTS
    Suela, J.
    Ferreira, S. O.
    Abramof, E.
    Ribeiro, I. R. B.
    Malachias, A.
    PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 7 - +
  • [42] ROLE OF BOND STRAIN IN THE CHEMISTRY OF HYDROGEN ON SI(111) AND SI(100) SURFACES
    BOLAND, JJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1991, 202 : 187 - PHYS
  • [43] Interfacial reaction of eutectic AuSi solder with Si (100) and Si (111) surfaces
    Jang, JW
    Hayes, S
    Lin, JK
    Frear, D
    53RD ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 2003 PROCEEDINGS, 2003, : 1243 - 1247
  • [44] Monolayer-induced band shifts at Si(100) and Si(111) surfaces
    Maekinen, A. J.
    Kim, Chul-Soo
    Kushto, G. P.
    APPLIED PHYSICS LETTERS, 2014, 104 (04)
  • [45] SI(111) AND SI(100) SURFACES OBSERVED IN AIR BY SCANNING TUNNELING MICROSCOPY
    CRICENTI, A
    SELCI, S
    SCARSELLI, M
    CHIAROTTI, G
    APPLIED SURFACE SCIENCE, 1992, 56-8 : 34 - 38
  • [46] THEORETICAL STUDIES OF CHEMISORPTION OF Ni ON Si(111) AND Si(100) SURFACES.
    Tian, Zengju
    Zheng, Kaiming
    Ye, Ling
    Xie, Xide
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1987, 8 (03): : 261 - 269
  • [47] Oxidation kinetics of hydrogen-enriched Si(100) and Si(111) surfaces
    Alexandrova, S
    Szekeres, A
    THIN SOLID FILMS, 1999, 343 : 389 - 392
  • [48] Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)
    Fudan Univ, Shanghai, China
    Thin Solid Films, (60-64):
  • [49] Ge dots on Si (111) and (100) surfaces with SiO2 coverage:: Raman study
    Volodin, VA
    Efremov, MD
    Orekhov, DA
    Nikiforov, AI
    Pchelyakova, OP
    Ulyanova, VV
    Yakimov, AI
    Dvurechenskii, A
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 23 (3-4): : 320 - 323
  • [50] Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)
    Jiang, ZM
    Zhu, HJ
    Lu, F
    Qin, J
    Huang, DM
    Wang, X
    Hu, CW
    Chen, YF
    Zhu, ZQ
    Yao, T
    THIN SOLID FILMS, 1998, 321 : 60 - 64
12345