Empirical Pseudopotential Method for the Band Structure Calculation of Strained-Silicon Germanium Materials

被引：0

作者：

Gonzalez S. ^{[1
]}

Vasileska D. ^{[1
]}

Demkov A.A. ^{[2
]}

机构：

[1] Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, 85287-5706, AZ

[2] Physical Sciences Research Labs, Motorola, Inc., 7700 S. River Parkway, Tempe, 85284, AZ

来源：

Journal of Computational Electronics | 2002年 / 1卷 / 1-2期

关键词：

band structure calculation; empirical pseudopotential method; strained-silicon germanium; virtual crystal approximation;

D O I：

10.1023/A:1020713105879

中图分类号：

学科分类号：

摘要：

The band structure of strained-silicon germanium (Si1 − xGex) is calculated as a preliminary step in developing a full band Monte Carlo (FBMC) simulator. The band structure for the alloy is calculated using the empirical pseudopotential method (EPM) within the virtual crystal approximation (VCA). Spin-orbit interaction is included into the calculation via the Löwdin quasi-degenerate perturbation theory, which significantly reduces the computation time. Furthermore, strain is included by utilizing basic elastic theory. Ultimately, the band structure for strained Si1 − xGex is calculated at various germanium concentrations. © 2002, Kluwer Academic Publishers.

引用

页码：179 / 183

页数：4

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