Formation of defects during fullerene bombardment and repair of vacancy defects in graphene

被引:0
|
作者
Jun Luo
Tinghong Gao
Lianxin Li
Quan Xie
Zean Tian
Qian Chen
Yongchao Liang
机构
[1] Guizhou University,Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering
[2] Guizhou Provincial Engineering Research Center for Livelihood Big Data Comprehensive Application,undefined
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
The use of high-energy ions or clusters to bombard graphene is emerging as a new method for the theoretical study of graphene properties. In this study, using molecular dynamics simulations and empirical potentials, the behaviors of graphene after bombardment by C60 under different initial velocities from 13.7 to 15.7 km/s were investigated. The simulations showed four types of defects: Stone–Wales defects, single vacancy defects, multiple vacancy defects, and out-of-plane carbon adatoms. The self-healing phenomenon of defective graphene was observed. In the low-speed region (< 14.5 km/s), the self-healing ability of graphene is enhanced at higher temperature. However, the effect of temperature is not obvious in the high-speed region, where velocity dominates. To repair vacancy defects in graphene, a physical method was proposed. The initial positions of lost atoms were traced, and then, the atoms were slowly dropped into the vacancy defects to effect repair. The simulations provide a fundamental understanding of bombardment between graphene and C60 and propose a new method for repairing vacancy defects in graphene.
引用
收藏
页码:14431 / 14439
页数:8
相关论文
共 50 条
  • [21] Formation of vacancy-type defects in titanium nickelide
    Baturin, Anatolii
    Lotkov, Aleksander
    Grishkov, Victor
    Lider, Andrei
    ESOMAT 2015 - 10TH EUROPEAN SYMPOSIUM ON MARTENSITIC TRANSFORMATIONS, 2015, 33
  • [22] Adsorption on graphene with vacancy-type defects: A model approach
    Alisultanov, Z. Z.
    PHYSICS OF THE SOLID STATE, 2013, 55 (06) : 1304 - 1314
  • [23] High harmonic generation in graphene quantum dots with vacancy defects
    Gnawali, Suresh
    Apalkov, Vadym
    PHYSICA B-CONDENSED MATTER, 2025, 699
  • [24] Adsorption on graphene with vacancy-type defects: A model approach
    Z. Z. Alisultanov
    Physics of the Solid State, 2013, 55 : 1304 - 1314
  • [25] Vacancy defects in the vertical heterostructures of graphene and MoS2
    Li, Wei
    You, Yizhou
    Choi, Jin-Ho
    SURFACE SCIENCE, 2021, 707
  • [26] Electron transport properties of graphene with charged impurities and vacancy defects
    Yasuhiko Kudo
    Kazuyuki Takai
    Toshiaki Enoki
    Journal of Materials Research, 2013, 28 : 1097 - 1104
  • [27] Spin-Density Localization in Graphene at Boundaries and at Vacancy Defects
    Goswami, Tamal
    Panda, Anirban
    Klein, Douglas J.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 123 (14): : 9479 - 9485
  • [28] Effect of vacancy defects in graphene on metal anchoring and hydrogen adsorption
    Kim, Gyubong
    Jhi, Seung-Hoon
    Lim, Seokho
    Park, Noejung
    APPLIED PHYSICS LETTERS, 2009, 94 (17)
  • [29] Role of Vacancy Defects and Nitrogen Dopants for the Reduction of Oxygen on Graphene
    Zhang, Weizhe
    van Dijk, Bas
    Wu, Longfei
    Maheu, Clement
    Tudor, Viorica
    Hofmann, Jan Philipp
    Jiang, Lin
    Hetterscheid, Dennis
    Schneider, Gregory
    ACS CATALYSIS, 2024, 14 (14): : 11065 - 11075
  • [30] Electron transport properties of graphene with charged impurities and vacancy defects
    Kudo, Yasuhiko
    Takai, Kazuyuki
    Enoki, Toshiaki
    JOURNAL OF MATERIALS RESEARCH, 2013, 28 (08) : 1097 - 1104