A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam

被引：0
|
作者：
L. Hrubčín
Yu. B. Gurov
B. Zaťko
O. M. Ivanov
S. V. Mitrofanov
S. V. Rozov
V. G. Sandukovsky
V. A. Semin
V. A. Skuratov
机构：
[1] Joint Institute for Nuclear Research,
[2] Institute of Electrical Engineering,undefined
[3] Slovak Academy of Sciences,undefined
[4] National Research Nuclear University,undefined
[5] Moscow Engineering Physics Institute,undefined
来源：
Instruments and Experimental Techniques | 2018年 / 61卷
关键词：
Radiation Hardness; Integral Flux; Flerov Laboratory; Silicon Carbide Detectors; Volt-farad Characteristics;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：769 / 771
页数：2
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