Photothermal deflection investigation of bulk Si and GaSb transport properties

被引:0
|
作者
S. Ilahi
F. Saadalah
N. Yacoubi
机构
[1] Université de Carthage,Unité de Recherche de Caractérisation Photo
来源
Applied Physics A | 2013年 / 110卷
关键词
GaSb; Probe Beam; Minority Carrier; Auger Recombination; Doping Density;
D O I
暂无
中图分类号
学科分类号
摘要
The photo-thermal deflection technique (PTD) is used to study the transport properties such as non-radiative lifetime of minority carriers (τnr), electronic diffusivity (D) and surface recombination velocity (S) in bulk silicon (Si) and gallium antimonide (GaSb) semiconductors. A generalized one-dimensional theoretical model has been also developed, and the coincidence between experimental curves giving the normalized amplitude and phase variations versus square root modulation frequency and the corresponding theoretical curves makes possible to deduce the electronic parameters cited above.
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页码:459 / 464
页数:5
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