Photothermal deflection investigation of bulk Si and GaSb transport properties

被引：10
|
作者：
Ilahi, S. [1 ]
Saadalah, F. [1 ]
Yacoubi, N. [1 ]
机构：
[1] Univ Carthage, IPEIN, Unite Rech Caracterisat Phototherm & Modelisat, Merazka 8000, Nabeul, Tunisia
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2013年 / 110卷 / 02期
关键词：
RECOMBINATION;
D O I：
10.1007/s00339-012-7242-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photo-thermal deflection technique (PTD) is used to study the transport properties such as non-radiative lifetime of minority carriers (tau (nr)), electronic diffusivity (D) and surface recombination velocity (S) in bulk silicon (Si) and gallium antimonide (GaSb) semiconductors. A generalized one-dimensional theoretical model has been also developed, and the coincidence between experimental curves giving the normalized amplitude and phase variations versus square root modulation frequency and the corresponding theoretical curves makes possible to deduce the electronic parameters cited above.
引用
收藏
页码：459 / 464
页数：6
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