Full-band particle-based analysis of device scaling for 3D tri-gate FETs

In this work, a 25 nm gate length three-dimensional tri-gate SOI FET with a wrap around gate geometry is studied using a full-band particle-based simulation tool. The tri-gate FETs have shown superior scalability over planar device structures, reduction of short channel effects, higher drive currents and excellent gate-channel controllability compared to their planar counterparts. Simulations were performed by scaling the length and the width of the tri-gate SOI FET channel to study its short-channel and short-width effects. The influence of the scaling on the dynamic response has also been explored by performing a frequency analysis on the device. © 2005 Springer Science + Business Media, Inc.