A Study of Moisture Effects on Ti/Porous Silicon/Silicon Schottky Barrier

被引：0
|
作者：
V. Strikha
V. Skryshevsky
V. Polishchuk
E. Souteyrand
J.R. Martin
机构：
[1] Kiev National Shevchenko University,Radiophysics Department
[2] Ecole Centrale de Lyon,undefined
来源：
Journal of Porous Materials | 2000年 / 7卷
关键词：
porous Si; Schottky barrier; moisture sensor;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Results of capacitance-voltage and current-voltage measurements performed on Ti/porous silicon (PS)/p-Si diode structures are presented. A 5–10 increase of conductivity and capacity has been observed at f < 10000 Hz in response to the moisture change from 0 to 50%. Model of Schottky contact on thin PS layer with the charge carriers inside of pores and PS/Si interface is applied to explain the frequency dependence of conductivity/capacity as well as moisture effect.
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页码：111 / 114
页数：3
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