Graphene field-effect transistors as room-temperature terahertz detectors

被引：0
|
作者：
L. Vicarelli
M. S. Vitiello
D. Coquillat
A. Lombardo
A. C. Ferrari
W. Knap
M. Polini
V. Pellegrini
A. Tredicucci
机构：
[1] NEST,Department of Engineering
[2] Istituto Nanoscienze-CNR and Scuola Normale Superiore,undefined
[3] Laboratoire Charles Coulomb UMR 5221,undefined
[4] Université Montpellier 2 and CNRS,undefined
[5] Cambridge University,undefined
来源：
Nature Materials | 2012年 / 11卷
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学科分类号：
摘要：
Its high carrier mobility is one of the factors that makes graphene interesting for electronic and photonic applications at terahertz frequencies. Such possibilities are now further supported by the demonstration of an efficient room-temperature graphene detector for terahertz radiation that promises to be considerably faster than competing techniques.
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收藏
页码：865 / 871
页数：6
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