Bulk Grain Resistivity of ZnO-Based Varistors

被引：0
|
作者：
A. C. Caballero
D. Fernández Hevia
J. de Frutos
M. Peiteado
J. F. Fernández
机构：
[1] Instituto de Cerámica y Vidrio,Dpto. de Electrocerámica
[2] CSIC,E.T.S.I. Telecomunicación
[3] Univ. Politécnica de Madrid,undefined
来源：
Journal of Electroceramics | 2004年 / 13卷
关键词：
varistors; electrical properties; bulk conductivity;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We study the temperature dependence of grain resistivity in ZnO ceramic varistors (300–430 K), finding a positive temperature coefficient (PTC). We devise a high-frequency procedure that allow us to obtain the concentration and energy position of the shallow donor. The observed behavior is consistent with a shallow donor approaching complete ionization, and with an electron mobility mainly controlled by lattice (both optical and acoustical) scattering. The impact of this behavior on varistor performance under high-current pulse loads is discussed.
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页码：759 / 763
页数：4
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