Bulk grain resistivity of ZnO-based varistors

被引：7
|
作者：
Caballero, AC
Hevia, DF
De Frutos, J
Peiteado, M
Fernández, JF
机构：
[1] Univ Politecn Madrid, ETSI Telecomunicac, E-28040 Madrid, Spain
[2] CSIC, Inst Ceram & Vidrio, Dpto Electroceram, E-28049 Madrid, Spain
来源：
JOURNAL OF ELECTROCERAMICS | 2004年 / 13卷 / 1-3期
关键词：
varistors; electrical properties; bulk conductivity;
D O I：
10.1007/s10832-004-5188-6
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We study the temperature dependence of grain resistivity in ZnO ceramic varistors (300-430 K), finding a positive temperature coefficient (PTC). We devise a high-frequency procedure that allow us to obtain the concentration and energy position of the shallow donor. The observed behavior is consistent with a shallow donor approaching complete ionization, and with an electron mobility mainly controlled by lattice (both optical and acoustical) scattering. The impact of this behavior on varistor performance under high-current pulse loads is discussed.
引用
收藏
页码：759 / 763
页数：5
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