Trivalent Gadolinium-Doped Diopside (CaMgSi2O6) for Photoluminescence and EPR Investigation

被引:0
|
作者
Vijay Singh
Sooraj H. Nandyala
V. Natarajan
Ji Bong Joo
机构
[1] Konkuk University,Department of Chemical Engineering
[2] University of Birmingham,School of Metallurgy and Materials
[3] Nilkanthrao Shinde Science and Arts college,undefined
来源
Journal of Electronic Materials | 2022年 / 51卷
关键词
Luminescence; EPR; Gd; CaMgSi; O; phosphor; sol–gel;
D O I
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中图分类号
学科分类号
摘要
Gd3+-doped CaMgSi2O6 phosphors with varying dopant content were processed successfully using sol-gel preparation. Prepared products were verified by x-ray diffraction data, which indicated the formation of a monoclinic phase. Scanning electron microscopy suggested the formation of tightly aggregated phosphor particles. A strong photoluminescence emission peak of 6P7/2 → 8S7/2 at 313 nm was observed in the studied phosphors under 273-nm excitation. The changes in emission intensity were also monitored with respect to the concentration of Gd3+. X-band electron paramagnetic resonance (EPR) spectra of the phosphors revealed the fine structure lines of Gd3+ ions typical of orthorhombic or lower symmetry. In addition, the intensity of the EPR spectrum from Gd3+ showed saturation beyond 0.03 mol of Gd3+ doping.
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页码:5521 / 5527
页数:6
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