Solution-based metal induced crystallized polycrystalline silicon films and thin-film transistors

被引：1
|
作者：
Shuyun Zhao
Zhiguo Meng
Chunya Wu
Shaozhen Xiong
Man Wong
Hoi Sing Kwok
机构：
[1] Nankai University,Institute of Photo
[2] The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology,electronics
[3] (Nankai University and Tianjin University),Key Laboratory of Opto
[4] Ministry of Education,electronic Information Science and Technology
[5] The Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering
来源：
Journal of Materials Science: Materials in Electronics | 2007年 / 18卷
关键词：
Active Layer; Threshold Voltage; Hall Mobility; Bias Stress; Field Effect Mobility;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Dish-like and wadding-like domain polycrystalline silicon (poly-Si) films were obtained with Solution-based Metal Induced Crystallization (S-MIC) of amorphous silicon (α-Si). The hall mobility of poly-Si was much higher in dish-like domain than in wadding-like domain. The field effect mobility of dish-like domain poly-Si TFTs and wadding-like poly-Si FTFs were 70–80 cm2/Vs and 40–50 cm2/Vs, respectively. P-type TFTs exhibited excellent reliability.
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页码：117 / 121
页数：4
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