Solution-based metal induced crystallized polycrystalline silicon films and thin-film transistors

被引：1

作者：

Shuyun Zhao

Zhiguo Meng

Chunya Wu

Shaozhen Xiong

Man Wong

Hoi Sing Kwok

机构：

[1] Nankai University,Institute of Photo

[2] The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology,electronics

[3] (Nankai University and Tianjin University),Key Laboratory of Opto

[4] Ministry of Education,electronic Information Science and Technology

[5] The Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering

来源：

Journal of Materials Science: Materials in Electronics | 2007年 / 18卷

关键词：

Active Layer; Threshold Voltage; Hall Mobility; Bias Stress; Field Effect Mobility;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Dish-like and wadding-like domain polycrystalline silicon (poly-Si) films were obtained with Solution-based Metal Induced Crystallization (S-MIC) of amorphous silicon (α-Si). The hall mobility of poly-Si was much higher in dish-like domain than in wadding-like domain. The field effect mobility of dish-like domain poly-Si TFTs and wadding-like poly-Si FTFs were 70–80 cm2/Vs and 40–50 cm2/Vs, respectively. P-type TFTs exhibited excellent reliability.

引用

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页码：117 / 121

页数：4

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