Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties

被引:0
|
作者
Tuomas Haggren
Ali Shah
Anton Autere
Joona-Pekko Kakko
Veer Dhaka
Maria Kim
Teppo Huhtio
Zhipei Sun
Harri Lipsanen
机构
[1] Aalto University,Department of Micro
来源
Nano Research | 2017年 / 10卷
关键词
antireflection; GaAs; parylene-C; metallo-organic vapor phase epitaxy (MOVPE); annealing; light emitting diode (LED);
D O I
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中图分类号
学科分类号
摘要
Light management and electrical isolation are essential for the majority of optoelectronic nanowire (NW) devices. Here, we present a cost-effective technique, based on vapor-phase deposition of parylene-C and subsequent annealing, that provides conformal encapsulation, anti-reflective coating, improved optical properties, and electrical insulation for GaAs nanowires. The process presented allows facile encapsulation and insulation that is suitable for any nanowire structure. In particular, the parylene-C encapsulation functions as an efficient antireflection coating for the nanowires, with reflectivity down to <1% in the visible spectrum. Furthermore, the parylene-C coating increases photoluminescence intensity, suggesting improved light guiding to the NWs. Finally, based on this process, a NW LED was fabricated, which showed good diode performance and a clear electroluminescence signal. We believe the process can expand the fabrication possibilities and improve the performance of optoelectronic nanowire devices.
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页码:2657 / 2666
页数:9
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