Charge carrier lifetime recovery in γ-irradiated silicon under the action of ultrasound

被引：0
|
作者：
A. O. Podolian
A. B. Nadtochiy
O. A. Korotchenkov
机构：
[1] Taras Shevchenko National University of Kyiv,
来源：
Technical Physics Letters | 2012年 / 38卷
关键词：
Light Emit Diode; Technical Physic Letter; Carrier Lifetime; Deep Level Transient Spectroscopy; Minority Carrier Lifetime;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Ultrasonic treatment of γ-irradiated silicon can lead to a significant (up to about 70%) recovery of the minority carrier lifetime reduced by the irradiation. A mechanism of the ultrasound-induced recovery is proposed, which is based on the release of vacancies from E-type centers followed by their trapping on defect sinks. It is suggested that the role of defect sinks can be played by A-type microdefects.
引用
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页码：405 / 408
页数：3
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