Spectral anisotropy of a photoresponse from heterojunctions based on GaSe and InSe layered crystals

被引：0
|
作者：
V. N. Katerinchuk
Z. R. Kudrynskyi
Z. D. Kovalyuk
机构：
[1] National Academy of Sciences of Ukraine,Frantsevich Institute for Problems in Materials Science
来源：
Technical Physics | 2014年 / 59卷
关键词：
Wave Edge; Hetero Junction; Monoselenide; Virgin Surface; Photoresponse Spectrum;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The object of investigation is photoresponse spectra taken from the cleaved end face of heterojunctions formed by GaSe and InSe anisotropic crystals. Spectra taken from the as-prepared and chemically processed faces of the heterojunctions are compared. A modified method of growing GaSe crystals with a virgin end face is suggested, and the surface of GaSe crystals thus grown is examined by atomic force microscopy.
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页码：407 / 410
页数：3
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