Synthesis of germanium nanocrystals in SiO2

被引：1
|
作者：
J. G. COUILLARD
H. G. CRAIGHEAD
机构：
[1] Department of Materials Science and Engineering,*School of Applied and Engineering Physics,
[2] Cornell University,undefined
[3] ,undefined
来源：
Journal of Materials Science | 1998年 / 33卷
关键词：
Polymer; Precipitation; SiO2; Transmission Electron Microscopy; Solid Solution;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Germanium nanocrystals in SiO2 with an average diameter of 5–25 nm were fabricated by co-deposition and annealing at 700–1000 °C. X-ray diffraction and transmission electron microscopy were used to measure the nanocrystal growth as a function of anneal time and temperature. The precipitation of nanocrystals was found not to follow the theory for precipitation from a solid solution of Lifshitz–Slezov; nanocrystal growth appears instead to be determined primarily by anneal temperature with little anneal time dependence. This departure from theory is attributed to the high concentration (40 at%) of germanium in the deposited films. A modified log-normal distribution was found to describe the distribution of nanocrystal sizes best. Photoluminescence was observed from nanocrystal-containing films, with luminescence energy shifted from that of bulk germanium. The luminescence spectra are in agreement with the theory of Brus for quantum confined carriers in small semiconductor crystals.
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页码：5665 / 5669
页数：4
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