Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors

被引：0
|
作者：
R.Y. Li
Z.G. Wang
B. Xu
P. Jin
X. Guo
M. Chen
机构：
[1] Chinese Academy of Sciences,Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors
[2] Beijing University of Technology,Laboratory of Photoelectronics Technology
来源：
Applied Physics A | 2007年 / 86卷
关键词：
GaAs; Oxidation Time; AlGaAs Layer; Volatile Reaction Product; 03As Layer;
D O I：
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中图分类号：
学科分类号：
摘要：
The interface of wet oxidized Al0.97Ga0.03As/GaAs in a distributed Bragg reflector (DBR) structure has been studied by means of transmission electron microscopy and Raman spectroscopy. With the extension of oxidation time, the oxide/GaAs interfaces are not abrupt any more. There is an amorphous film near the oxide/GaAs interface, which is Ga2O3 related to the prolonged heating. In the samples oxidized for 10 and 20 min, there are some fissures along the oxidized AlGaAs/GaAs interfaces. In the samples oxidized or in situ annealed for long time, no such fissures are present due to the complete removal of the volatile products.
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页码：19 / 22
页数：3
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